The unipolar resistive switching properties of the amorphous LaGdO₃ thin films deposited by pulsed laser deposition have been investigated. Reliable and repeatable nonvolatile switching of the resistance of LaGdO₃ films was obtained between two well defined states of low and high resistance with nearly constant resistance ratio ~ 10⁶ and non-overlapping switching voltages in the range of 0.6-0.75 V and 2.5-4 V respectively. The current conduction mechanism of the device in low and high resistance states were found to be dominated by the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film showed no obvious degradation for up to ~ 12 hours indicating good retention. The switching between low and high resistance states was attributed to formation and rupture of conductive filaments. The achieved characteristics of the resistive switching in LaGdO₃ thin films seem to be promising for futuristic nonvolatile memory applications.