We describe a procedure for the optimization of a 3C-SiC buffer layer for the deposition of 3C-SiC on (001) Si substrates. A 100 – 150 nm thick SiC buffer was deposited after a standard carbonization at 1125 °C, while increasing the temperature from 1125 °C to 1380 °C. Ramp time influenced the quality and the crystallinity of the buffer layer and the presence of voids at the SiC/Si interface. After the optimization of the buffer, to demonstrate its effectiveness, a high-quality 3C-SiC was grown, with excellent surface morphology, crystallinity and low stress.