Using different types of nanosecond lasers with wavelengths in the range from 248 to 1064 nm and a femtosecond (fs) laser with λ = 785 nm, dielectric SiN x or SiO x layers on silicon wafers were opened locally to form diffusion and metallization masks. The wafers were all Cz-grown single-crystalline material and were either smooth, i.e. shiny etched, or textured and had a phosphorus-doped emitter or not. For all laser types, the laser parameters which were necessary and sufficient to open the dielectric layers were determined as optimal parameters. Additionally, screen-printed etching pastes were employed to open the dielectric layers in parallel experiments. The opened structures were characterized microscopically and by means of effective minority carrier lifetime measurements. The effects of the utilized laser parameters on surface structure and carrier lifetime are discussed. Secondary ion mass spectroscopy reveals the effects of the different laser irradiations on the phosphorus doping profile. SunsVoc measurements confirm the capability of the investigated process steps in solar-cell processing.