Published in
American Chemical Society, Chemistry of Materials, 15(23), p. 3408-3410, 2011
DOI: 10.1021/cm201729s
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Solution-Processed Molecular Bis(Naphthalene Diimide) Derivatives with High Electron Mobility
Journal article published in 2011 by
Lauren E. Polander,
Shree P. Tiwari 
,
Laxman Pandey,
Brian M. Seifried,
Qing Zhang,
Stephen Barlow,
Chad Risko,
Jean-Luc Brédas,
Bernard Kippelen,
Seth R. Marder
,
Laxman Pandey,
Brian M. Seifried,
Qing Zhang,
Stephen Barlow,
Chad Risko,
Jean-Luc Brédas,
Bernard Kippelen,
Seth R. Marder
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Abstract
Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1.