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IOP Publishing, Journal of Physics: Condensed Matter, 22(19), p. 226216, 2007

DOI: 10.1088/0953-8984/19/22/226216

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Activation mechanisms in sodium-doped Silicon MOSFETs

Journal article published in 2006 by T. Ferrus ORCID, Ch WBarnes, R. George, C. H. W. Barnes, N. Lumpkin, Dj J. Paul ORCID, M. Pepper
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This paper is available in a repository.

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Abstract

We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find that the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.