Write current reduction in transition metal oxide based resistance-change memory is found by defining the storage node portion of the devices. It is estimated that, using just a single stacked cross-bar structure with a node size of 16 nm, it is possible to realize densities as high as 100 GB cm -2. A dominant current path is found to exist in the low-resistance state of unipolar resistance-change materials, a therefore a reduction in cell area does not reduce the operation current. Resistance Random Access Memory (RRAM) will not be easily scalable and the write current must be reduced by another method whenever the density is increased. At cell sizes below 500nm×500nm, the data suggests that there exists an extra factor which reduces the low-resistance-state (LRS) current density, decreasing the write current.