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American Institute of Physics, Journal of Applied Physics, 7(108), p. 073503

DOI: 10.1063/1.3471818

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Inverse Hall–Petch relationship in the nanostructured TiO2: Skin-depth energy pinning versus surface preferential melting

Journal article published in 2010 by X. J. Liu, L. W. Yang, Z. F. Zhou, Paul K. Chu, Chang Q. Sun ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The functional dependence of stress, elastic modulus, melting point, and their interdependence on the identities bond order, nature, length, and strength of a representative bond of the specimen has been established for deeper insight into the transition from the conventional Hall–Petch relationship HPR to the inverse HPR IHPR for nanostructured TiO 2 . Theoretical reproduction of the observed inverse HPR suggests that the intrinsic competition between the energy-density gain elastic modulus enhancement and the cohesive-energy remnant melting point depression in the grain boundaries originates and the extrinsic competition between the activation and the inhibition of atomic dislocations activates the IHPR. © 2010 American Institute of Physics.