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American Institute of Physics, Applied Physics Letters, 1(105), p. 012401, 2014

DOI: 10.1063/1.4887349

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Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

Journal article published in 2014 by P. de Coux, R. Bachelet ORCID, B. Warot Fonrose, V. Skumryev, L. Lupina, G. Niu, T. Schroeder, J. Fontcuberta, F. Sanchez, F. Sánchez ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.