Published in
Elsevier, Synthetic Metals, 3(146), p. 243-250
DOI: 10.1016/j.synthmet.2004.08.031
Links
Tools
FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes
Journal article published in 2004 by
P. Ostoja,
P. Maccagnani 
,
M. Gazzano,
M. Cavallini,
J. C. Kengne,
R. Kshirsagar,
F. Biscarini ,
M. Melucci,
M. Zambianchi,
G. Barbarella
,
M. Gazzano,
M. Cavallini,
J. C. Kengne,
R. Kshirsagar,
F. Biscarini ,
M. Melucci,
M. Zambianchi,
G. Barbarella
This paper is available in a repository.
Full text: Download
Postprint:
archiving forbidden
Published version:
archiving forbidden
Data provided by 
Abstract
Bottom contact FET devices were realized, using vacuum evaporated thin films of unsubstituted quinquethiophene and two modified derivatives deposited at different substrate temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) data on thin films deposited in the same conditions are reported and related to the electrical characteristics of the devices.