Because of the existence of interface Schottky barriers and depolarization electric field, ferroelectric films sandwiched between top and bottom electrodes are strongly expected to be used as a new kind of solar cells. However, the photocurrent with a typical order of μA/cm(2) is too low to be practical. Here we demonstrate that the insertion of an n-type cuprous oxide (Cu(2)O) layer between the Pb(Zr,Ti)O(3) (PZT) film and the cathode Pt contact in a ITO/PZT/Pt cell leads to the short-circuit photocurrent increasing 120-fold to 4.80 mA/cm(2) and power conversion efficiency increasing of 72-fold to 0.57% under AM1.5G (100 mW/cm(2)) illumination. Ultraviolet photoemission spectroscopy and dark J-V characteristic show an ohmic contact on Pt/Cu(2)O, an n(+)-n heterojunction on Cu(2)O/PZT and a Schottky barrier on PZT/ITO, which provide a favorable energy level alignment for efficient electron-extraction on the cathode. Our work opens up a promising new method that has the potential for fulfilling cost-effective ferroelectric-film photovoltaic.