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Nature Research, Nature Communications, 1(5), 2014

DOI: 10.1038/ncomms5720

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An upconverted photonic nonvolatile memory

Journal article published in 2014 by Ye Zhou ORCID, Su-Ting Han, Xian Chen, Feng Wang ORCID, Yong-Bing Tang, V. A. L. Roy
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.