Trans Tech Publications, Materials Science Forum, (717-720), p. 149-152, 2012
DOI: 10.4028/www.scientific.net/msf.717-720.149
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In this paper we study the surface morphology of < 11-20 > 4 degrees degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of the surface roughness. Furthermore, we find preliminary indications that the same growth parameters that lead to the reduction of the surface roughness promote also a reduction of (1,3) and (4,4) stacking faults density.