Published in
American Institute of Physics, AIP Conference Proceedings, 2007
DOI: 10.1063/1.2730455
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High-order THz-sideband generation in semiconductors
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Abstract
The optical sideband generation in semiconductors under intense THz lasers presents flat wide-band spectra with the cutoff determined by the maximum energy-gain of electron-hole pairs in quantum trajectories under the THz field. The approximation based on the quantum trajectory picture agrees well with the numerical simulations.