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Wiley, Advanced Materials, 36(26), p. 6284-6289, 2014

DOI: 10.1002/adma.201401917

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Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density

Journal article published in 2014 by Shinbuhm Lee, Abhijeet Sangle, Ping Lu, Aiping Chen ORCID, Wenrui Zhang, Jae Sung Lee, Haiyan Wang, Quanxi Jia, Judith L. MacManus-Driscoll
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We develop a novel device structure using easy-to-grow nanoscaffold films to localize oxygen vacancy at vertical heterointerfaces. Our strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high concentration oxygen vacancy. We demonstrate nonlinear electroresistance at room temperature using these nanoscaffold devices. The resistance variations exceed two orders of magnitude with very high uniformity and tunability.