An efficient electron injection layer (EIL) for inverted bottom-emission organic light-emitting diodes (IBE-OLEDs) is developed by doping ytterbium (Yb) into an organic electron transport material of 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB). The Yb-doped EIL in the IBE-OLEDs having iridium(III) bis(4,6-(difluorophenyl)pyridinato-N,C2′) picolinate (FIrpic) as a blue phosphorescent dopant shows a lower turn-on voltage (∼4.5 V) and about a 6.6 times higher efficiency (∼8.6% and 15.3 cd/A at 0.15 mA/cm2) compared with the device without the Yb-doped EIL. Furthermore, the electroluminescence spectrum of the device with the Yb-doped EIL is about the same as that of the device without the Yb-doped EIL. This result indicates that the Yb-doped EIL improves the electron injection from the ITO cathode to the organic electron transport layer. Therefore, the Yb-doped EIL can be utilized as an effective electron injection layer in the OLEDs.