Fabrication of a Ti 2 AlN MAX phase for contact applications to GaN--based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti 2 AlN monocrystalline growth was observed on GaN and Al 2 O 3 substrates by an-nealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600 • C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti 2 AlN layers showed ohmic behaviour with contact resistivities in the range 10 −4 Ω cm 2 .