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American Chemical Society, Crystal Growth and Design, 9(10), p. 4197-4202, 2010

DOI: 10.1021/cg1008335

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Pd-Assisted Growth of InAs Nanowires

Journal article published in 2010 by S. Heun, B. Radha, D. Ercolani ORCID, G. U. Kulkarni, F. Rossi, V. Grillo, G. Salviati, F. Beltram, L. Sorba ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We report the Pd-assisted chemical beam epitaxy growth of zinc blende InAs nanowires which are grown on InAs(111)A substrates by employing Pd octane and hexadecyl thiolates as catalyst precursors. The structural properties of these nanowires are investigated by scanning and transmission electron microscopy. Furthermore, we demostrate the growth of InAs nanowires on patterned substrates by employing the Pd hexadecylthiolate precursors as a direct-write resist in electron beam lithography.