Published in
IOP Publishing, Semiconductor Science and Technology, 5(20), p. L20-L22, 2005
DOI: 10.1088/0268-1242/20/5/l02
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Investigation of the injection velocity of holes in strained Si pMOSFETs
Journal article published in 2005 by
G. Nicholas,
H. von Känel,
T. J. Grasby,
E. H. C. Parker,
T. E. Whall,
D. J. Paul 
,
A. G. R. Evans,
H. von Känel
,
A. G. R. Evans,
H. von Känel
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Abstract
Using a pulsed measurement system, the drain current in a high mobility strained Si pMOSFET was extracted in the absence of self-heating. This was used to demonstrate that the injection velocity of holes from the source is well below the thermal limit for biaxial tensile strained Si pMOSFETs down to 0.1 µm channel length.