Conventional organic light-emitting electrochemical cells show promise for lighting applications but in many cases suffer from unbalanced electrochemical doping. A predominant p-doping over n-doping causes an off-centered emissive p-n junction, which leads to poor power-conversion efficiency. Here, we report a half-gate lightemitting electrochemical transistor (HGLECT), in which a ion-conductive gate made from poly(3,4-ethylenedioxythiophene)-poly-(styrenesulfonate) is employed to combat this problem. The gate material, covering half the channel, is used to enhance the ndoping in this part by employing an appropriate operation protocol. We demonstrate a centered light emission zone, closely following the geometry of the gate material. The HGLECT with centered emission profile is shown to be more efficient than the corresponding LEC without gate electrode, and its n-doping level is measured to be 15%. ; On the day of the defence date the status of this article was Manuscript .