Published in
2008 5th IEEE International Conference on Group IV Photonics
DOI: 10.1109/group4.2008.4638169
Links
Tools
Sputtered Ge-Si heteroepitaxial thin films for photodetection in third window
Proceedings article published in 2008 by
Massimo Fere,
Marta Lanata,
Davide Piccinin,
Silvia M. Pietralunga 
,
Andrea Zappettini,
Paolo M. Ossi,
Mario Martinelli
,
Andrea Zappettini,
Paolo M. Ossi,
Mario Martinelli
This paper is available in a repository.
Full text: Download
Published version:
archiving forbidden
Data provided by 
Abstract
DC-pulsed magnetron sputtering (PMS) allows to produce heteroepitaxial p -type Germanium thin films on 6rdquo Silicon wafers. Integrated p - n photodiodes, based on DC-PMS deposited Ge/Si heterojunctions, feature flat responsivity over the whole third communication window.