The current-voltage ( I - V ) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED ( IO = 2 × 10^-9A) is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 × 300 μm² ( IO 1 = 1 × 10^-25 A; IO 2 = 1 × 10^-14 A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.