Interfaces between donor and acceptor semiconducting polymers are critical to the performance of polymer light-emitting diodes and organic solar cells. Similarly, interfaces between a conjugated polymer and a dielectric play a critical role in organic thin-film transistors. Often, these interfaces are difficult to characterize with conventional methods. Resonant soft x-ray reflectivity (R-SoXR) is a unique and relatively simple method to investigate such interfaces. R-SoXR capabilities are exemplified by presenting or discussing results from systems spanning all three device categories. We also demonstrate that the interfacial widths between active layers can be controlled by annealing at elevated temperature, pre-annealing of the bottom layer, or casting from different solvent mixtures. The extension of R-SoXR to the fluorine K absorption edge near 698 eV is also demonstrated.