Spectra of photoluminescence (PL) including its decay time spectra and spectra of PL excitation (PLE) of heteroepitaxial structures with quantum dots (QD) InAs/GaAs have been studied. Structures had been grown by submonolayer migration-enhanced epitaxy (SMEE) mode on vicinal substrates GaAs at deposited InAs thickness close to critical (1.8 monolayer (ML)). It has been shown that PL structure under study is formed by the recombination emission of different QD families. One family consists of associated QD groups confined by vicinal terraces discretely broadened due to step bunching effect, another family - of isolated QD separated from rest QD array due to wetting layer (WL) ruptures at terrace edges. Excited exciton states of various QD groups have been detected. Their particular features are determined depending on the temperature, power and wavelength of photoexcitation.