Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate PMMA resist residues on SiO 2 surfaces after electron beam exposure and resist development. It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices. © 2002 American Vacuum Society.