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Wiley, Journal of Microscopy, 2(236), p. 115-118, 2009

DOI: 10.1111/j.1365-2818.2009.03255.x

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TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates

Journal article published in 2009 by P. Dłuzewski, J. Sadowski, S. Kret, J. Dabrowski, K. Sobczak ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the 111 direction. NW with higher Mn concentrations grow along the 110 direction and reveal a branching structure. The main nanowire and branches grow along the 110 directions belonging to only one {111} plane.