Published in

IOP Publishing, Journal of Physics: Conference Series, (643), p. 012043, 2015

DOI: 10.1088/1742-6596/643/1/012043

Links

Tools

Export citation

Search in Google Scholar

The effect of the sulfide passivation on the luminescence of microdisk mesas with quantum wells and quantum dots

Journal article published in 2015 by N. V. Kryzhanovskaya, M. V. Lebedev, T. V. Lvova, Yu V. Kudashova, I. I. Shostak, E. I. Moiseev ORCID, A. E. Zhukov, M. V. Maximov ORCID, M. M. Kulagina, A. M. Nadtochiy, S. I. Troshkov
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Green circle
Published version: archiving allowed
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

Sulphide passivation was used for reducing the surface recombination velocity of microdisk mesas based on (AlGaIn)As/GaAs heterostructures with active region formed either by ten GaAs/AlAs quantum wells or by 1 layer of InAs/In0.15Ga0.85As quantum dots. It was demonstrated that the sulfide passivation results in substantial increase of photoluminescence intensity in all types of the mesa-structures studied.