A systematic study of Raman and electric transport measurements on Bi2-xSbxSe3 thin films Bi2-xSbx Se3 thin films were grown on freshly cleaved mica. The Bi/Sb ratio was determined by controlling the temperatures of the Bi and Sb cells. In order to reduce the Se vacancies, the thin film growth was maintained under Se-rich conditions with the substrate temperature set at 200 °C. The thickness of the films was fixed at 8 QL by controlling the growth time. The topography of grown films was examined by AFM in tapping mode, and the film thickness was determined by scanning a scratch deliberately made on as-grown thin films. The doping concentrations were determined by energy dispersive spectroscopy through TEM and X-ray photoelectron spectroscopy. Raman data were obtained at room temperature with a spectrometer with a 514.5 nm laser. Subsequently, thin films were etched into 1 mm wide Hall bars by Ar plasma etching. The results demonstrate a feasible approach to suppressing the bulk influence and manipulating the band structure while maintaining the topological non-trivial surface in the Bi2-xSbxSe 3 system.