A correlation between bonding changes in silicon-rich silicon nitride films, subjected to high temperature annealing under N ₂ ambient, and the formation of silicon nanocrystals is presented. The postannealing appearance of a shoulder between 1000 and 1100 cm ^-1 in the Fourier transform infrared (FTIR) spectra of silicon-rich silicon nitride films is attributed to a reordering in the films toward an increased SiN ₄ bonding configuration resulting from the precipitation of silicon nanocrystals. The FTIR monitoring of bonding changes in these films allows for the indirect verification of silicon nanocrystal formation.