Published in

American Institute of Physics, Applied Physics Letters, 13(105), p. 131105

DOI: 10.1063/1.4896679

Links

Tools

Export citation

Search in Google Scholar

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Journal article published in 2014 by L. Redaelli, A. Mukhtarova, S. Valdueza Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure Vincent, C. Durand, J. Eymery ORCID, E. Monroy
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474nm by increasing the well thickness from 1.3 to 5.4nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.