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Wiley, Small, 7(8), p. 966-971, 2012

DOI: 10.1002/smll.201102654

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Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate

Journal article published in 2012 by Yongjie J. Zhan, Zheng Liu ORCID, Sina Najmaei, Pulickel M. Ajayan, Jun Lou
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN).