Nanocrystalline cubic yttrium-stabilized ZrO2 films (YSZ) were prepared on silicon substrate via Sol-Gel combined with spin-coating method. The as-grown films were characterized by optical microscope, SEM, XRD and TEM. It was found that preparation parameters have obvious effect on quality of the YSZ film. The quality of YSZ thin films can be greatly improved by adding PVA as dispersing agent, adopting the grading drying process and increasing the spin speed. Smooth films without any cracks can be obtained by optimum growth conditions. XRD result shows that the film is cubic structure with no other phase. The thickness of the YSZ film is about 60 nm, and its average grain-size is 9.4 nm. When the samples are irradiated by Xe ions with low dose at room-temperature, microscopic cracks are detected in the YSZ films. As the ion irradiation dose increases, the irradiation-induced cracks are gradually recovered, which might attribute to the thermal spike effect on the film. In addition, the average grain-size of the YSZ film grows with irradiation dose increasing.