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American Institute of Physics, Applied Physics Letters, 23(105), p. 231104, 2014

DOI: 10.1063/1.4903740

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Terahertz surface emission from Cu2ZnSnSe4 thin film photovoltaic material excited by femtosecond laser pulses

Journal article published in 2014 by Zhenyu Zhao, Gudrun Niehues, Stefan Funkner, Elmer Estacio, Qifeng Han, Kohji Yamamoto, Jingtao Zhang, Wangzhou Shi, Qixin Guo ORCID, Masahiko Tani
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We observed efficient terahertz (THz) emission from sol-gel grown Cu2ZnSnSe4 (CZTSe) thin films using THz time domain spectroscopy technique. The THz emission bandwidth exceeds 2 THz with a dynamic range of 20 dB in the amplitude spectrum. The THz emission amplitude from CZTSe is found to be independent of external magnetic fields. Comparing the polarity of THz emission waveforms of CZTSe and GaAs, we suggest that the acceleration of photo-carriers in the surface accumulation layer of CZTSe is the dominant mechanism of radiation emission. Optical excitation fluence dependence measurements show that the saturation fluence of the CZTSe thin film reaches 1.48 μJ/cm2.