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Published in

American Institute of Physics, Journal of Applied Physics, 9(110), p. 094508

DOI: 10.1063/1.3660406

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Low voltage vertical organic field-effect transistor with polyvinyl alcohol as gate insulator

Journal article published in 2011 by Lucieli Rossi, Keli F. Seidel ORCID, Wagner S. Machado, Ivo A. Hümmelgen
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We report the preparation of low gate leakage current organic field effect transistors in vertical architecture using polyvinyl alcohol as gate insulator and C60 fullerene as n-type semiconductor in devices with gate, source, and drain electrodes of Al. Intermediate electrode and top electrode operate, respectively, as source and drain, or vice-versa, depending on polarity. In these devices the intermediate electrode (source or drain) is permeable to the electric field produced by the gate so that increased drain current is obtained at either increasingly negative gate voltage when the source is the intermediate electrode or increasingly positive gate voltage when the drain is the intermediate electrode.