Microwave processing, in general, is an energy efficient, rapid and green technique; and in particular, is most energy efficient when it is carried out in a single (electric or magnetic field) mode. Also, it is now established that the technique is capable of processing all kind of materials-ranging from metals to insulators, and in several morphologies. The present paper is aimed at presenting our recent work on the formation of Mn-doped Si 0.95 Ge 0.05 alloy semiconductor nanowires (nearly 100 m long) at temperatures lower (by ~400 C) than the equilibrium alloy phase formation temperatures in 5 min, in a single mode (TE011) cylindrical resonant cavity at 2.45 GHz. The X-ray diffractograms confirmed the Mn incorporation in SiGe alloy samples. The elemental composition of nanowires is found to be primarily consisting of silicon, germanium, manganese with small amounts of nitrogen and oxygen. The M-H loops of manganese doped SiGe alloy samples, recorded at room temperature by employing vibration sample magnetometer, clearly indicate the induction of spin ordering leading to ferromagnetism in these samples. This has been confirmed by the Arrott's plot (M 2 versus H/M) exhibiting negative intercept on the H/M axis. From the Hall measurement, it is found that Mn-doped sample is of p-type, and, therefore, the long range exchange coupling is hole-mediated.