Solid-phase epitaxial regrowth for patterned amorphous regions has been known to form device degrading mask-edge defects. Prior studies have shown that orientation dependence of regrowth leads to pinching of the slow regrowing corners 111 fronts that create these defects K. L. Saenger et al., J. Appl. Phys. 101, 104908 2007. Also, the effect of n-type and p-type dopants on regrowth is known only for 001 bulk B. of these dopants boron and arsenic on the patterned amorphous regrowth to see if there is any change in the corner regrowth. The experiment was done on very low resistivity wafers 0.003 cm so that the doping concentration was constant in the whole amorphous region and the doping was high enough to have a significant effect on the regrowth. Recent studies have also shown that local -c interface curvature is an important factor in modeling patterned amorphous regrowth for intrinsic Si S. Morarka et al., J. Appl. Phys. 105, 053701 2009. This experiment shows the dopant-curvature relationship that is important from modeling perspective. © 2010 American Vacuum Society.