Photoluminescence (PL) of a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well (MQW) structure was studied above room temperature, in the range of 300-440 K. Both direct and indirect radiative recombination PL features were observed. The relative intensity of direct to indirect recombination markedly increases with the increase of temperature. The enhancement of PL from direct recombination above RT has been attributed to the thermal excitation of carriers from L-type to C-type confined states. This extends the potential applicability of Ge/SiGe MQW as light emitters on a Si-based platform and is favorable for applications in metal-oxide-semiconductor integrated circuits which normally operate above RT. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700804]