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American Institute of Physics, Journal of Applied Physics, 12(92), p. 7098-7101, 2002

DOI: 10.1063/1.1520724

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Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution

Journal article published in 2002 by Noritaka Usami, Tatsuya Takahashi, Kozo Fujiwara, Toru Ujihara ORCID, Gen Sazaki, Yoshihiro Murakami, Kazuo Nakajima
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We report on growth and characterizations of Si/multicrystalline-SiGe (mc-SiGe) heterostructure as a promising candidate to surpass mc-Si solar cells. Spatial distribution of the status of strain in Si was investigated using microscopic Raman spectroscopy. The strain was found to be strongly influenced by the composition and microstructure of underlying mc-SiGe. Spatial variation of the strain as well as strain relaxation was found to be suppressed by decreasing average Ge composition of underlying SiGe. © 2002 American Institute of Physics.