Published in
IOP Publishing, Journal of Physics: Condensed Matter, 34(26), p. 342202, 2014
DOI: 10.1088/0953-8984/26/34/342202
Links
- IOP Publishing | PDF
- ORCID
- [www.researchgate.net] | PDF
- [www.researchgate.net] | PDF
- [arxiv.org] | PDF
Tools
Pressure tuning the Fermi level through the Dirac point of giant Rashba semiconductor BiTeI.
Journal article published in 2014 by
D. VanGennep,
S. Maiti,
D. Graf 
,
S. W. Tozer,
C. Martin,
H. Berger,
D. L. Maslov,
J. J. Hamlin
,
S. W. Tozer,
C. Martin,
H. Berger,
D. L. Maslov,
J. J. Hamlin
This paper is made freely available by the publisher.
Full text: Download
Published version:
archiving forbidden
Data provided by 
Abstract
Pressure tuning the Fermi level through the Dirac point of giant Rashba semiconductor BiTeI.