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Royal Society of Chemistry, RSC Advances, 19(3), p. 6775

DOI: 10.1039/c3ra40504d

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A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

Journal article published in 2013 by Jingjing Chang ORCID, Jinjun Shao, Jie Zhang, Jishan Wu, Chunyan Chi
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

A phthalimide-fused naphthalene diimde (NDIIC24) with a low-lying LUMO energy level (−4.21 eV) and moderate solubility was synthesized. Organic field effect transistors (OFETs) based on solution processed thin films showed typical n-channel characteristics with a high electron mobility of 0.056 cm2 V−1 s−1 and a high on–off current ratio of 105–106. The devices exhibited very good air stability and operating stability. Complementary inverters based on n-type NDIIC24 and p-type TIPS–pentacene demonstrated a maximum voltage gain (−dVOUT/dVIN) of 64.