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American Physical Society, Physical Review B (Condensed Matter), 24(64), 2001

DOI: 10.1103/physrevb.64.245112

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Image-potential band-gap narrowing at a metal/semiconductor interface

Journal article published in 2001 by Ryotaro Arita ORCID, Yoshiaki Tanida, Kazuhiko Kuroki, Hideo Aoki
This paper is available in a repository.
This paper is available in a repository.

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Abstract

GW approximation is used to systematically revisit the image-potential band-gap narrowing at metal/semiconductor interfaces proposed by Inkson in the 1970's. Here we have questioned how the narrowing as calculated from quasi-particle energy spectra for the jellium/Si interface depends on $r_s$ of the jellium. The gap narrowing is found to only weakly depend on $r_s$ (i.e., narrowing $≃ 0.3$ eV even for a large $r_s = 6)$. Hence we can turn to smaller polarizability in the semiconductor side as an important factor in looking for larger narrowing. Comment: 6 pages, 7 figures