Published in
American Institute of Physics, Applied Physics Letters, 26(107), p. 262102, 2015
DOI: 10.1063/1.4938746
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Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy
Journal article published in 2015 by
F. Oliveira,
I. A. Fischer,
A. Benedetti 
,
P. Zaumseil ,
M. F. Cerqueira ,
M. I. Vasilevskiy,
S. Stefanov,
S. Chiussi ,
J. Schulze
,
P. Zaumseil ,
M. F. Cerqueira ,
M. I. Vasilevskiy,
S. Stefanov,
S. Chiussi ,
J. Schulze
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