Nitride-based light emitting diodes (LEDs) have received great attention with emission wavelength from ultraviolet to green. However, conventional c-plane GaN LEDs suffer from polarization-related electric fields, which result in poor carrier recombination efficiency and red-shift in the emission wavelength. In order to reduce the undesirable polarization effects, non-polar plane GaN LEDs have been proposed and reported. But the non-polar films also suffer from poor crystalline quality and rough surface morphology, especially for hetero-epitaxy. Several research groups have reported high performance non-polar GaN-based LEDs grown on bulk GaN substrates [1]. However, high price, small size, and non-uniformity in the substrates also make them difficult for mass production. On the other hand, nano-patterned a-plane GaN on sapphire substrate has been proposed as a solution. It is thought of as a method to achieve low cost, large area, and high uniformity a-GaN on sapphire. In this paper, self-assembled Ni nano-islands [2] are applied to form a-plane GaN nanorod template. We also grew blue and green [3] nano-patterned a-plane GaN LEDs on those nanorod templates.