Published in
Elsevier, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, (695), p. 150-153
DOI: 10.1016/j.nima.2011.12.098
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Progress in the realization of a silicon-CNT photodetector
,
C. Aramoa,
A. Ambrosio,
M. Ambrosio,
P. Castrucci,
M. Cilmo,
M. De Crescenzi,
E. Fiandrini,
F. Guarino,
V. Grossi,
E. Nappi,
M. Passacantando ,
G. Pignatel,
S. Santucci,
M. Scarselli
and other authors.
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Abstract
The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100 V. The spectral behavior reflects the silicon spectral range with a maximum at about 880 nm.