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American Institute of Physics, Applied Physics Letters, 8(107), p. 082109

DOI: 10.1063/1.4929714

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Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH3 surface preparation

Journal article published in 2015 by Emily L. Warren ORCID, Alan E. Kibbler, Ryan M. France, Andrew G. Norman ORCID, Paul Stradins, William E. McMahon
This paper is available in a repository.
This paper is available in a repository.

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