Electrical resistance, transversal magnetoresistance and the Hall effect were studied on polycrystalline CaTixRu1-xO3 (x = 0, 0.07) samples using a conventional Quantum Design PPMS-9 equipment in the temperature range 2-300 K and magnetic field up to 9 T. Substantial differences were found between the two samples: (i) opposite to the metallic character of CaRuO3, the substituted sample has insulating-like electrical resistance; (ii) the magnetoresistance of the substituted sample changes the sign from negative to positive values with increasing temperature. The magnetoresistance of CaRuO3 is negative, the sign reversal is induced by magnetic field and only at temperatures below 15 K, such a behaviour is predicted for clustered systems; (iii) the Hall voltage in pure CaRuO 3 also changes sign from negative to positive values above 35 K. This temperature coincides with the observed magnetic transition temperature, indicating that the magnetic state and the carrier character interrelate.