Published in
Wiley, Advanced Materials, 6(25), p. 883-888, 2012
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Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect
Journal article published in 2012 by
Y. S. Zhou,
Yu Sheng Zhou,
Ronan Hinchet 
,
Ya Yang,
Gustavo Ardila,
Rudeesun Songmuang,
Fang Zhang,
Yan Zhang,
Weihua H. Han,
Ken Pradel,
Laurent Montes,
Mireille Mouis,
Zhong Lin Wang,
Z. L. Wang
,
Ya Yang,
Gustavo Ardila,
Rudeesun Songmuang,
Fang Zhang,
Yan Zhang,
Weihua H. Han,
Ken Pradel,
Laurent Montes,
Mireille Mouis,
Zhong Lin Wang,
Z. L. Wang
This paper is available in a repository.
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Abstract
Enhanced transverse force sensitivity of vertically aligned GaN nanowires is demonstrated using the piezotronic effect. The transverse force sensitivity is calculated to be 1.24 ± 0.13 ln(A)/nN, with a resolution better than 16 nN and the response time less than 5 ms. The nano-Newton force resolution shows the potential for piezoelectric semiconductor materials to be used as the main building block for micro-/nanosensor arrays or artificial skin.