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MAIK Nauka/Interperiodica, Physics of the Solid State, 5(40), p. 772-774

DOI: 10.1134/1.1130448

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Carrier statistics in quantum-dot lasers

Journal article published in 1998 by M. Grundmann ORCID, R. Heitz, D. Bimberg
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The description of quantum-dot ensembles using solely average carrier populations is insufficient. Keeping track of the probablity of all micro states, and solution of the master equations for the transitions between them, allows proper modeling of the phonon bottleneck and laser properties. We predict that a single exciton shows gain and calculate the dependence of threshold current density of the type of capture process. The gain-current relation in quantum-dot lasers is linear. (C) 1998 American Institute of Physics.