An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal-oxide (MO) nanoparticle (NP) charge transport layers (CTLs) is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP based QLEDs show excellent device performance, with a peak luminance of 21,300 cd m-2 at the emission wavelength of 516 nm, the maximum current efficiency (CE) of 4.4 cd/A, and a low turn-on voltage of 3 V. More importantly, with the efficient design of device architecture, these devices exhibit a significant improvement in the device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-folds higher than that of the standard device.