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IOP Publishing, IOP Conference Series: Materials Science and Engineering, (38), p. 012054, 2012

DOI: 10.1088/1757-899x/38/1/012054

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Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

Journal article published in 2012 by R. Aleksiejūnas, P. Ščajev, S. Nargelas, S. Miasojedovas, K. Jarašiūnas, L. Trinkler, J. Grigorjeva, B. Berzina, K. H. Chen, Y. T. Chen ORCID, M. W. Chen, L. C. Chen
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in AlxGa1−xN nanocolumns grown on (111) silicon substrates and in thick AlxGa1−xN epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.