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American Institute of Physics, Journal of Applied Physics, 2(112), p. 023520

DOI: 10.1063/1.4739725

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Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP

Journal article published in 2012 by R. M. France, W. E. McMahon, A. G. Norman ORCID, J. F. Geisz, M. J. Romero
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We show a strong relationship between CuPt atomic ordering and misfit dislocation glide plane preference during strain relaxation. A miscut substrate creates an asymmetry in the resolved mismatch stress between {111} glide planes, causing a preference for one glide plane that results in a systematic tilt of the epilayer relative to the substrate. However, a small degree of ordering leads to nearly 100% of dislocation glide on planes opposite to the expected planes from the substrate miscut. This result is explained as a consequence of the asymmetry between {111} glide planes of CuPt-ordered material. Lowering the ordering parameter by changing bulk composition results in a change in glide plane distribution and is accomplished through the formation of new dislocations. Control of the glide plane distribution is therefore possible by controlling the ordering parameter on a vicinal substrate. Knowledge and control of this relaxation mechanism is important for the reduction of threading dislocations in lattice-mismatched devices.